Radiation Pressure Dominate Regime of Relativistic Ion Acceleration

The electromagnetic radiation pressure becomes dominant in the interaction of the ultra-intense electromagnetic wave with a solid material, thus the wave energy can be transformed efficiently into the energy of ions representing the material and the high density ultra-short relativistic ion beam is generated. This regime can be seen even with present-day technology, when an exawatt laser will be built. As an application, we suggest the laser-driven heavy ion collider.Comment: 10 pages, 4 figure

Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.Comment: 4 pages. Memory Workshop (IMW), 2015 IEEE Internationa

Iterative graph cuts for image segmentation with a nonlinear statistical shape prior

Shape-based regularization has proven to be a useful method for delineating objects within noisy images where one has prior knowledge of the shape of the targeted object. When a collection of possible shapes is available, the specification of a shape prior using kernel density estimation is a natural technique. Unfortunately, energy functionals arising from kernel density estimation are of a form that makes them impossible to directly minimize using efficient optimization algorithms such as graph cuts. Our main contribution is to show how one may recast the energy functional into a form that is minimizable iteratively and efficiently using graph cuts.Comment: Revision submitted to JMIV (02/24/13

Mitigating switching variability in carbon nanotube memristors

Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

A simulation package for CNT memory cells is developed, based on computational modeling of both the mesoscopic structure of carbon nanotube films and the electrical conductivity of inter-CNT contacts. The developed package enables the modeling of various electrical measurements and identification of a range of operation conditions delivering desirable device characteristics. This approach opens the path for optimization of the CNT fabric to meet performance requirements

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications